Field-Effect Transistor Built with a Single Crystal Si Nanoparticle

Our program involve the synthesis, assembly, and structural and electrical characterization of single crystal Si nanoparticles. The goal of this work is developing high-speed electrical nanoparticle devices. In this article we review the processes needed to demonstrate a vertical transistor built using PtSi as a Schottky barrier source and drain. A surround-gate of Pt is insulated from body of the Si nanoparticle by 2 nm of SiO2. A group of such nanoparticle transistors were self-aligned and connected in parallel for electrical characterization. The fabrication processes were based on conventional semiconductor manufacturing technologies without any sophisticated photolithography. Ultrathin etching and CMP steps were developed. As a result, control of the drain/source current by the gate voltage was observed on the transistor. We believe that this is the first time that such a transistor has been built using a crystalline Si nanoparticle.